90512 tkim/53006ea msim tb-00002345 no. a0411-1/7 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 2sc6095 bipolar transistor 80v, 2.5a, low v ce ( sat ) , npn single pcp applicaitons ? dc / dc converter, relay drivers, lamp drivers, motor drivers, inverter features ? adoption of fbet, mbit process ? large current capacity ? low collector-to-emitter saturation voltage ? high-speed switching ? high allowable power dissipation speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 120 v collector-to-emitter voltage v ces 120 v v ceo 80 v emitter-to-base voltage v ebo 6.5 v collector current i c 2.5 a collector current (pulse) i cp 4a continued on next page. package dimensions unit : mm (typ) 7007b-004 ordering number : ENA0411A product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collecto r 3 : emitter pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sc6095-td-e qf lot no. 2 3 1
2sc6095 no. a0411-2/7 continued from preceding page. parameter symbol conditions ratings unit base current i b 500 ma collector dissipation p c when mounted on ceramic substrate (250mm 2 0.8mm) 1.3 w tc=25 c 3.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =70v, i e =0a 1 a emitter cutoff current i ebo v eb =4v, i c =0a 1 a dc current gain h fe v ce =5v, i c =100ma 300 600 gain-bandwidth product f t v ce =10v, i c =500ma 350 mhz output capacitance cob v cb =10v, f=1mhz 14 pf collector-to-emitter saturation voltage v ce (sat)1 i c =1a, i b =50ma 100 150 mv v ce (sat)2 i c =1a, i b =100ma 90 135 mv base-to-emitter saturation voltage v be (sat) i c =1a, i b =100ma 0.9 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 120 v collector-to-emitter breakdown voltage v (br)ces i c =100 a, r be =0 120 v v (br)ceo i c =1ma, r be = 80 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 6.5 v turn-on time t on see speci ed test circuit. 40 ns storage time t stg 920 ns fall time t f 32 ns switching time test circuit ordering information device package shipping memo 2sc6095-td-e pcp 1,000pcs./reel pb free v r 10 r b v cc =40v i c =10i b1 = --10i b2 =0.5a v be = --5v + + 50 input outpu t r l 470 f 100 f pw=20 s i b1 d.c. 1% i b2 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2sc6095 no. a0411-3/7 i c -- v ce collector current, i c -- a collector-to-emitter voltage, v ce -- v i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a cob -- v cb v ce (sat) -- i c v be (sat) -- i c collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v h fe -- i c f t -- i c collector current, i c -- a dc current gain, h fe gain-bandwidth product, f t -- mhz collector current, i c -- a ta=75 c --25 c it11076 25 c 0.01 3 25 0.1 73 257 3 25 1.0 0.1 0.01 5 3 2 7 5 3 7 2 2.0 1.6 1.2 0.8 0.4 0 2.5 2.0 1.5 0.5 1.0 0 0.2 0 0.4 0.6 0.8 1.0 it11070 5ma 10ma 20ma 40ma 60ma 80ma 100ma i b =0ma 2ma 1ma ta=75 c 25 c --25 c v ce =5v 0 0.2 0.4 0.6 0.8 1.2 1.0 it11071 5 5 3 3 2 100 10 7 7 it11074 ta=75 c --25 c it11075 i c / i b =10 25 c 3 1.0 2 3 ta= --25 c 25 c 75 c 2 7 5 i c / i b =10 it11077 ta=75 c 25 c --25 c 7 100 1000 7 5 3 3 2 5 0.01 3 25 0.1 73 257 23 1.0 5 0.01 3 25 0.1 73 257 23 1.0 7 100 10 1000 5 3 2 7 5 3 2 0.01 3 25 0.1 73 257 3 25 1.0 0.1 3 25 1.0 73 257 23 10 57 100 0.1 0.01 5 3 2 7 5 3 7 5 3 2 0.01 3 25 0.1 73 257 23 1.0 5 v ce =5v it11072 it11073 i c / i b =20 v ce =10v f=1mhz
2sc6095 no. a0411-4/7 4.0 0 3.5 3.0 2.0 1.5 1.0 0.5 2.5 20 060 40 80 100 140 120 160 it11080 0 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 20 060 40 80 100 140 120 160 it11079 1.0 0.01 7 5 3 2 7 5 3 2 0.1 7 5 3 2 1.0 0.1 10 100 25 37 25 37 25 37 it11078 100ms 10ms <10 s 1ms 500 s 100 s dc operation (ta=25 c) mounted on a ceramic board (250mm 2 ? 0.8mm) dc operation (tc=25 c) i cp =4a i c =2.5a mounted on a ceramic board (250mm 2 ? 0.8mm) a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v collector dissipation, p c -- w p c -- ta collector dissipation, p c -- w p c -- tc ambient temperature, ta -- c case temperature, tc -- c tc=25 c single pulse
2sc6095 no. a0411-5/7 embossed taping speci cation 2sc6095-td-e
2sc6095 no. a0411-6/7 outline drawing land pattern example 2sc6095-td-e mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
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